REFRACTORY SILICIDES FOR INTEGRATED CIRCUITSMURARKA SP.1980; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1980; VOL. 17; NO 4; PP. 775-792; BIBL. 77 REF.Article

OXYGEN PARTIAL-PRESSURE DEPENDENCE OF THE OXIDATION-INDUCED SURFACE STACKING FAULTS IN (100) N SILICON.MURARKA SP.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5020-5026; BIBL. 23 REF.Article

ROLE OF POINT DEFECTS IN THE GROWTH OF THE OXIDATION-INDUCED STACKING FAULTS IN SILIUM. II: RETROGROWTH, EFFECT OF HCL OXIDATION AND ORIENTATIONMURARKA SP.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 2; PP. 692-701; BIBL. 32 REF.Article

DIFFUSION AND SEGREGATION OF ION-IMPLANTED BORON IN SILICON IN DRY OXYGEN AMBIENTS.MURARKA SP.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 2502-2519; BIBL. 33 REF.Article

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HIGH-TEMPERATURE STABILITY OF AUPT/N-GAAS SCHOTTKY BARRIER DIODES.MURARKA SP.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 869-876; BIBL. 12 REF.Article

THERMAL OXIDATION OF GAAS.MURARKA SP.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 4; PP. 180-181; BIBL. 8 REF.Article

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OXYGEN PARTIAL PRESSURE DEPENDENCE OF THE FIXED SURFACE STATE CHARGE Q_SS DUE TO THERMAL OXIDATION OF N-(100) SILICONMURARKA SP.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 9; PP. 587-588; BIBL. 22 REF.Article

OXYGEN PRESSURE DEPENDENCE OF THE RETROGROWTH OF OXIDATION-INDUCED STACKING FAULTS IN (100) SILICON.MURARKA SP.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 4; PP. 2513-2516; BIBL. 9 REF.Article

ROLE OF POINT DEFECTS IN THE GROWTH OF THE OXIDATION-INDUCED STACKING FAULTS IN SILICON.MURARKA SP.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 6; PP. 2849-2857; BIBL. 53 REF.Article

DIRECT OBSERVATION OF EPITAXIAL ISLANDS OF PD₂SI ON (001) SI = OBSERVATION DIRECTE D'ILOTS EPITAXIQUES DE PD₂SI SUR SI(001)VAIDYA S; MURARKA SP.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 51-53; BIBL. 3 REF.Article

OXIDATION INDUCED STACKING FAULTS IN N- AND P-TYPE (100) SILICON.MURARKA SP; QUINTANA G.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 46-51; BIBL. 50 REF.Article

REACTIVELY SPUTTERED TITANIUM CARBIDE THIN FILMS: PREPARATION AND PROPERTIESEIZENBERG M; MURARKA SP.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3190-3194; BIBL. 13 REF.Article

SILICIDE FORMATION IN THIN COSPUTTERED (TANTALUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO₂MURARKA SP; FRASER DB.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1593-1598; BIBL. 12 REF.Article

SILICIDE FORMATION IN THIN COSPUTTERED (TITANIUM+SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO₂MURARKA SP; FRASER DB.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 350-356; BIBL. 6 REF.Article

MEASURING THE PHOSPHORUS CONCENTRATION IN DEPOSITED PHOSPHOSILICATE FILMSADAMS AC; MURARKA SP.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 334-338; BIBL. 15 REF.Article

THERMAL OXIDATION OF HAFNIUM SILICIDE FILMS ON SILICONMURARKA SP; CHANG CC.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 7; PP. 639-641; BIBL. 12 REF.Article

CONTAMINATION OF SILICON AND OXIDIZED SILICON WAFERS DURING PLASMA ETCHINGMURARKA SP; MOGAB CJ.1979; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1979; VOL. 8; NO 6; PP. 763-779; BIBL. 6 REF.Article

THIN FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICONMURARKA SP; FRASER DB.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 342-349; BIBL. 19 REF.Article

EFFECT OF PHOSPHORUS DOPING ON STRESS IN SILICON AND POLYCRYSTALLINE SILICONMURARKA SP; RETAJCZYK TF JR.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 2069-2072; BIBL. 19 REF.Article

THERMAL NITRIDATION OF SILICON IN AMMONIA GAS: COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMSMURARKA SP; CHANG CC; ADAMS AC et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 6; PP. 996-1003; BIBL. 15 REF.Article

ANODIC OXIDE ON GAAS: QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER SPECTROSCOPY AND NEUTRON ACTIVATION ANALYSIS.CHANG CC; SCHWARTZ B; MURARKA SP et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 6; PP. 922-926; BIBL. 15 REF.Article

HEXAGONAL WSI₂ IN COSPUTTERED (TUNGSTEN AND SILICON) MIXTUREMURARKA SP; READ MH; CHANG CC et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 12; PP. 7450-7452; BIBL. 17 REF.Article

ELECTRICAL CONDUCTION AND BREAKDOWN IN OXIDES OF POLYCRYSTALLINE SILICON AND THEIR CORRELATION WITH INTERFACE TEXTUREHEIMANN PA; MURARKA SP; SHENG TT et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6240-6245; BIBL. 17 REF.Article